Contact resistivity measurement of silicide ohmic contacts to silicon p-type by Transmission Line Method
DOI:
https://doi.org/10.25206/1813-8225-2018-162-169-173Keywords:
contact resistivity measurement, TLM-method, silicon p-type, silicide ohmic contactsAbstract
Determination of contact resistivity ρK by Transmission Line Method is сonsidered. This way is used for making and measured silicide ohmic contacts to silicon p-type (with nominal resistivity ρ = 10 Ω∙cm) on the base of systems PtAg, PdAg and NiAg. It is shown that system PtAg has the most low values ρK = (5,5 – 5,6) ∙ 10–2 Ω∙cm2.
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Published
2019-01-18
How to Cite
[1]
Бурлаков, Р.Б. 2019. Contact resistivity measurement of silicide ohmic contacts to silicon p-type by Transmission Line Method. Omsk Scientific Bulletin. 6(162) (Jan. 2019), 169–173. DOI:https://doi.org/10.25206/1813-8225-2018-162-169-173.
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Section
Instrument Engineering, Metrology and Information-Measuring Devices and Systems
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