The method for fabricating photocell based on two Schottky barrier contacts Al-p-Si and Ti-p-Si

Abstract

The task of studies is a development of the structure and way of the fabrication of the photocell capable to take a radiation or in near infrared region of the spectrum (1–1,4) microns, or in the field of (0,5–1,4) microns. The way of fabrication and results of studies of photoelectric features of two spectrum photocell based on two Schottky barrier contacts Al-p-Si and Ti-p-Si situated on opposite parties Si plate is considered. It is shown that removing violated layer on surface of the silicon plate leads to significant increase voltage of the idling and current of the short circuit of the contact Al-p-Si situated on this surface and illuminated through the silicon plate.