Photocells based on silicide Schottky barrier contacts PtSi-n-Si and PdSi-n-Si

Abstract

Task of studies is a development of the structure and way of fabrication of a photocell capable to take a radiation or in
near infrared range of the spectrum (0,9–1,4) micron, or in the field of (0,5–1,4) micron. Way of fabrication and results of studies of photoelectric features of two spectrum photocells based on two Schottky barrier contacts PtSi-n-Si (or PdSi-n- Si), situated on opposite parties silicon plate, are сonsidered. It is shown that the explored photocell can be used for the transformation of the energy of the radiation in the electrical energy at room temperature in two ranges: or in near infrared region of the spectrum (0,9–1,4) micron, or in the field of (0,5–1,4) micron. This characteristic of the designed photocell
will allow to increase its application. Photocell possesses a simple structure and technology with a time of its fabrication
in the interval (2,5–3) of the hour.