The effect of annealing temperature on gas sensing response of non-stoichiometric manganese oxide IV

Authors

  • Юрий Алексеевич Стенькин Omsk Scientific Center of Siberian Branch of Russian Academy of Sciences, Omsk, Russia
  • Денис Витальевич Соколов Omsk Scientific Center of Siberian Branch of Russian Academy of Sciences, Omsk, Russia https://orcid.org/0000-0002-8120-6638

DOI:

https://doi.org/10.25206/1813-8225-2020-172-102-105

Keywords:

manganese dioxide, isochoric annealing, gas response

Abstract

Layers of non-stoichiometric manganese dioxide are obtained and their gas-sensing responses are studied. The temperature range of isochronous annealing has been determined, in which the obtained layers are highly sensitive to hydrogen sulfide, nitrogen dioxide, ammonia, and toxic organic gases — acetonitrile and phenol. The enhanced selectivity to organic gases by thermal annealing of oxide layers has been established.

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Author Biographies

Юрий Алексеевич Стенькин, Omsk Scientific Center of Siberian Branch of Russian Academy of Sciences, Omsk, Russia

кандидат химических наук, доцент (Россия), старший научный сотрудник лаборатории физики наноматериалов и гетероструктур.

Денис Витальевич Соколов, Omsk Scientific Center of Siberian Branch of Russian Academy of Sciences, Omsk, Russia

младший научный сотрудник лаборатории физики наноматериалов и гетероструктур.

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Published

2020-09-21

How to Cite

[1]
Стенькин, Ю.А. and Соколов, Д.В. 2020. The effect of annealing temperature on gas sensing response of non-stoichiometric manganese oxide IV. Omsk Scientific Bulletin. 4(172) (Sep. 2020), 102–105. DOI:https://doi.org/10.25206/1813-8225-2020-172-102-105.

Issue

Section

Instrument Engineering, Metrology and Information-Measuring Devices and Systems