The influence of Van der Waals interaction on electronic structure of coupled graphene planes

Authors

  • Валерий Викторович Болотов Omsk Scientific Center of the Siberian Branch of the Russian Academy of Sciences, Omsk, Russia
  • Виктор Анатольевич Сачков Omsk Scientific Center of the Siberian Branch of the Russian Academy of Sciences, Omsk, Russia

DOI:

https://doi.org/10.25206/1813-8225-2018-159-64-67

Keywords:

nanosensoric, carbon nanotubes, two-layer graphene, band structure, point defects, «ab initio»

Abstract

The work is devoted to the study of the influence of the Van der Waals interaction on the electronic properties of the distance of paired graphene planes. Calculations are made of the «ab initio» the width of the band gap as a function of the van der Waals interaction, which is varied by shifting one plane relative to the other. The conditions for the formation of a forbidden band in the band structure of coupled graphene planes with the help of Van der Waals interaction are investigated. The results obtained are applicable for the analysis of the band structure of multi-walled carbon tubes containing defects.

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Author Biographies

Валерий Викторович Болотов, Omsk Scientific Center of the Siberian Branch of the Russian Academy of Sciences, Omsk, Russia

доктор физико- математических наук, профессор (Россия), заведующий лабораторией физики наноматериалов и гетероструктур.

Виктор Анатольевич Сачков, Omsk Scientific Center of the Siberian Branch of the Russian Academy of Sciences, Omsk, Russia

кандидат физико- математических наук, старший научный сотрудник лаборатории физики наноматериалов и гетероструктур ОНЦ СО РАН.

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Published

2018-07-04

How to Cite

[1]
Болотов, В.В. and Сачков, В.А. 2018. The influence of Van der Waals interaction on electronic structure of coupled graphene planes. Omsk Scientific Bulletin. 3(159) (Jul. 2018), 64–67. DOI:https://doi.org/10.25206/1813-8225-2018-159-64-67.

Issue

Section

Instrument Engineering, Metrology and Information-Measuring Devices and Systems

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