Electron work function in individual multi-walled carbon nanotubes doped with nitrogen and boron

Authors

DOI:

https://doi.org/10.25206/1813-8225-2020-174-87-92

Keywords:

doped carbon nanotubes, electrostatic force microscopy, contact potential difference, electron work function

Abstract

Multi-walled undoped and doped with nitrogen and boron carbon nanotubes have been synthesized by chemical vapor deposition. Based on the analysis of images obtained by electrostatic force microscopy at various tip voltage, the value of the external contact potential difference between the tip and individual carbon nanotubes is determined. Using the obtained value of the contact potential difference, the electron work functions for undoped and doped with nitrogen and boron individual carbon nanotubes are calculated, which amounted to 4,7; 4,6 end 5,75 eV, respectively.

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Author Biographies

Надим Анварович Давлеткильдеев, Omsk Scientific Center of Siberian Branch of Russian Academy of Sciences, Omsk, Russia

кандидат физико-математических наук, доцент (Россия), старший научный сотрудник лаборатории физики наноматериалов и гетероструктур.

Денис Витальевич Соколов, Omsk Scientific Center of Siberian Branch of Russian Academy of Sciences, Omsk, Russia

младший научный сотрудник лаборатории физики наноматериалов и гетероструктур.

Евгений Юрьевич Мосур, Omsk Scientific Center of Siberian Branch of Russian Academy of Sciences, Omsk, Russia

кандидат физико-математических наук, доцент (Россия), старший научный сотрудник лаборатории физики наноматериалов и гетероструктур.

Иван Андреевич Лобов, Omsk Scientific Center of Siberian Branch of Russian Academy of Sciences, Omsk, Russia

младший научный сотрудник лаборатории физики наноматериалов и гетероструктур.

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Abstract views: 9

Published

2020-12-25

How to Cite

[1]
Давлеткильдеев, Н.А., Соколов, Д.В., Мосур, Е.Ю. and Лобов, И.А. 2020. Electron work function in individual multi-walled carbon nanotubes doped with nitrogen and boron. Omsk Scientific Bulletin. 6(174) (Dec. 2020), 87–92. DOI:https://doi.org/10.25206/1813-8225-2020-174-87-92.

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Section

Instrument Engineering, Metrology and Information-Measuring Devices and Systems

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