Modification of porous silicon using pulsed ion beam of nanosecond duration

Abstract

The effect of a pulsed ion beam of nanosecond duration on the morphology, chemical composition, and electronic structure of
porous silicon is studied. The gas sensitivity of the initial and irradiated samples is studied under exposure to NO2 and degassing in air. Its degradation is assessed over time. It is established that both the initial and irradiated samples have a sensitivity to NO2. In the case of the initial porous silicon, it disappears after 6 months, and in irradiated silicon it decreases after 3 months and then remains practically at the same level. This is a consequence of the formation of a passivating film, which prevents the degradation of the composition and properties of porous silicon when it comes into contact with the environment. The presence of such a film, represented by a SiO2, is confirmed by X-ray photoelectron spectroscopy (XPS) data.