Investigation of surface activity of semiconductors of the type AIIIBV. Possibilities of their use in sensor technology

Abstract

Based on the results of studies performed by methods of hydrolytic adsorption, mechanochemistry, IR spectroscopy, and quantum chemistry, the changes in the surface activity of semiconductors of the type AIIIBV (GaAs, InAs, InSb, InP) exposed
in air, thermovacuumed, mechanochemically dispersed in water, isopropyl alcohol. The weakly acid nature of the initial surfaces is shown, for which predominantly coordination-unsaturated atoms are responsible, the increased activity of freshly formed surfaces; A number of intermediate compounds appeared on real (partially hydrated) surfaces of semiconductors, as well as under water adsorption, adsorption and catalytic decomposition of isopropyl alcohol. The enrichment of freshly formed surfaces by coordination-unsaturated atoms and their clear determining role as active centers during the adsorption of molecules such as NH3, H2O, iso-C3H7OH, as well as certain regularities in the change in surface activity are established. Practical recommendations on the use of the studied semiconductors as materials (active elements) of gas sensor sensors are given.